crystal can dpdt dry circuit to 2 amps contact arrangement .......................... 2pdt (2 form c) weight ......................................................... 1.0 oz approx. designed to meet the requirements of mil - prf - 39016 . contact rating (note 1) resistive ............... 2 amps @ 28 vdc or 115v 400 hz (case ungrounded) inductive ........................................... 1 amp @ 28 vdc low level ............................ 10 - 50 a @ 10 - 50 mv dc or peak ac, (note 4) life ................................... 100,000 operations minimum @ 2 amps load, 125 o c pull in power: br8 ....................................................... 250 mw approx. br8h .................................................... 150 mw approx. operate/release time: br8 ................................................................. 5 ms max br8h .............................................................. 6 ms max excluding bounce time at nominal coil voltage contact bounce time ..................... 2 ms max @ 2 amps 6 vdc contact load contact resistance: before life ............... 0.050 ohms max. @ 2 amps and 6 vdc after life .................. 0.100 ohms max. @ 2 amps and 6 vdc temperatu re range ............................... - 65 o c to +125 o c vibration (note 2) ............................... 0.4" da 10 - 38 hz, 20 g's 38 - 2,000 hz shock (operating) (note 2) ........................ 50 g's 11 ms duty cycle ........................................................ continuous insulation resistance 10,000 megohms @ 500v 25 o c 1,000 megohms @ 500v 125 o c dielectric strength: sea level: contact to case ................................... 1,000 vrms contact to coil ..................................... 1,000 vrms coil to case ......................................... 1,000 vrms across open contacts ........................... 750 vrms 70,000 feet all points .................................................. 350 vrms notes 1. for case grounded loads and other ratings, consult t he factory. 2. for applications requiring other shock and vibration levels, consult the factory. 3. for other ratings consult the factory. 4. relay contacts which have switched high level currents are no longer suitable for switching low level loads. br8 crystal can dpdt dry circuit to 2 amps s pecifications general performance environmental electrical characteristics 1 www.microsemi.com ? 2015 microsemi corporation march 2015 rev. 3 downloaded from: http:///
relay type contact rating nominal coil resistance terminal style mounting type nominal c oil voltage h - 1k a 1 - 28v part number model br8h 2 amps (150 mw) model br8 2 amps (250 mw) br8h - 60()() - 6v br8 - 30()() - 6v br8h - 240()() - 12v br8 - 120()() - 12v br8h - 1k()() - 26v br8 - 600()() - 26v br8h - 20k()() - 115v br8 - 10k()() - 115v nominal coil voltage 6 vdc 12 vdc 26 vdc 115 vdc maximum coil voltage 7.3 vdc 14.8 vdc 32 vdc 127 vdc pull in voltage (max @ +125 o c) 4.4 vdc 8.4 vdc 18 vdc 79 vdc pull in voltage (max) 3 vdc 6 vdc 13 vdc 57.5 vdc drop out voltage (min) 0.3 vdc 0.6 vdc 1.3 vdc 5.7 vdc br8 30 ohms 120 ohms 600 ohms 10k ohms coil resistance 10% @ 25 o c br8h 60 ohms 240 ohms 1k ohms 20k ohms br8 ? unless otherwise specified, all tests made at nominal ? for special coil variations, switching configurations, ter - minals styles and mounting types, consult the factory. ? unless othe rwise specified, tolerances on decimal dimensions are .010". ? specifications contained herein are subject to change without notice. coil data schematic terminal view terminal styles mounting codes general notes 2 coil voltages, 25 o c . downloaded from: http:///
br8 - 03 / 03.15 microsemi corporate headquarters one enterprise, aliso viejo, ca 92656 usa within the usa : +1 (800) 713-4113 outside the usa : +1 (949) 380-6100 sales : +1 (949) 380-6136 fax : +1 (949) 215-4996 e-mail: sales.support@microsemi.com microsemi corporation (nasdaq: mscc) offers a comprehensive portfolio of semiconductor and system solutions for comm unications, defense & securi ty, aerospace and industrial markets. products include high-performance and radiation-hardened analog mixed-signal integrated circuits, fpgas, socs and asi cs; power management products; timing and synchronization devices and precise time soluti ons, setting the worlds standard for time; voice processing devices; rf solutions; discrete components; security technologies and scalable anti-tamper products; power-over-ethernet ic s and midspans; as well as custom design capabilities and services. microsemi is head quartered in aliso viejo, calif., and has approximately 3,400 employees globally. learn more at www.microsemi.com . ? 201 5 microsemi corporation. all rights reserved. microsemi and the microsemi logo are trademarks of microsemi corporation. all other trademarks and service marks are the property of their respective owners. microsemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. the products sold hereunder and any other products sold by microsem i have been subject to li mited testing and should not be used in conjunction with missi on-critical equipment or applications. any performance specifications are believed to be reliable but are not verified, and buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. buyer shall not rely on any data and performance specifications or para meters provided by micr osemi. it is the buyer's responsibility to independently determine suitability of any products and to test and verify the same. the information provided by microsemi hereunder is provi ded "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the buyer. microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other ip rights, whether with regard to such information itself or anything described by such in formation. information provided in this document is proprietary to microsemi, and microsemi reserves the ri ght to make any changes to the information in this document or to any products and services at any time without notice. downloaded from: http:///
|
